| 摘要 |
PROBLEM TO BE SOLVED: To provide a cell array of a non-volatile ferroelectric memory device which can reduce the load on the plate lines to decrease the chip areas. SOLUTION: The memory device is provided with a cell array region consisting of first and second cell array blocks which operate independently and are arranged adjacent to each other, a first driver region which drives a first split word line section where the plate line of the first cell array block and the word line of the second cell array block are commonly connected and is arranged adjacent only to the first cell array block, and a second driver region which drives the second split word line section commonly connected with the plate line of the second cell array block and the word line of the first cell array block and is arranged adjacent only to the second cell array block. The first and second driver regions are provided with a plurality of the split word line drivers directly connected to the plate lines of the respectively correspondent first and second cell array blocks. COPYRIGHT: (C)2004,JPO
|
