发明名称 |
Method of high selectivity wet etching of salicides |
摘要 |
A method for forming salicides with lower sheet resistance and increased sheet resistance uniformity over a semiconductor process wafer including providing a semiconductor process wafer having exposed silicon containing areas at a process surface; depositing a metal layer including at least one of cobalt and titanium over the process surface; carrying out at least one thermal annealing process to react the metal layer and silicon to form a metal silicide over the silicon containing areas; and, wet etching unsilicided areas of the metal layer with a wet etching solution including phosphoric acid (H3PO4), nitric acid (HNO3), and a carboxylic acid to leave salicides covering silicon containing areas at the process surface.
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申请公布号 |
US2004043624(A1) |
申请公布日期 |
2004.03.04 |
申请号 |
US20020235193 |
申请日期 |
2002.09.04 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
TSAI CHAO-JIE;PAN JENG YANG;WU CHIN-NAN;LIU MENG-CHANG;YEH SU-YU |
分类号 |
H01L21/285;H01L21/302;H01L21/3213;H01L21/461;(IPC1-7):H01L21/302 |
主分类号 |
H01L21/285 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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