| 摘要 |
PURPOSE: To provide a semiconductor memory device in which occupied area is small and power consumption is less. CONSTITUTION: This SRAM memory cell 1 has three storage holding states of a state in which 0, 1 are stored in storage nodes N1, N2, a state in which 1, 0 are stored in storage nodes N1, N2, a state in which 1, 1 are stored in storage nodes N1, N2. Therefore, operation can be performed by half of the number of memory cells comparing with conventional one in which two memory cells are required to store data signals of three kinds.
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