SEMICONDUCTOR DEVICE FOR REDUCING RESISTANCE OF CELL PAD CONTACT AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A semiconductor device for reducing the resistance of a cell pad contact and a manufacturing method thereof are provided to be capable of preventing the reduction of effective channel length of a gate. CONSTITUTION: A semiconductor device for reducing the resistance of a cell pad contact is provided with a gate oxide layer, a gate(280) formed at the upper portion of the gate oxide layer, and a spacer(290) formed at both sidewalls of the gate. The semiconductor device further includes the first insulating layer(320-1) formed at the upper portion of the resultant structure and a cell pad contact hole formed at the first insulating layer for partially exposing a semiconductor substrate(100). The second poly layer(380-1) is formed at the upper portion of the resultant structure. An ion region(390-1) is formed for being overlapped with a source/drain region(270). The third poly layer(410) is formed on the second poly layer. A filling process is carried out on the cell pad contact hole.