| 摘要 |
PURPOSE: A method for forming a dual damascene metal line of a semiconductor device using sacrificial filling material is provided to prevent pattern failure by forming an etching buffer layer at both sidewalls of a trench and sequentially removing a sacrificial filling layer. CONSTITUTION: An interlayer dielectric(331,333) and a polishing buffer layer(340) are sequentially formed at the upper portion of a semiconductor substrate(300). A via hole is formed by selectively etching the interlayer dielectric and the polishing buffer layer. A sacrificial filling layer(370) is formed on the polishing buffer layer for filling the via hole. A trench(365) is formed by selectively etching the sacrificial filling layer, the polishing buffer layer, and the interlayer dielectric for completing a dual damascene pattern. An etching buffer layer(385) is formed at both sidewalls of the trench. Then, the residue of sacrificial filling layer is removed. A metal line is formed at the inner portion of the dual damascene pattern.
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