Non-volatile semiconductor memory device having an increased access speed while maintaining the production yield

摘要

Bit lines formed from a first metal wiring layer and bit lines formed from a second metal wiring layer are provided as bit lines that intersect with word lines. The bit lines are formed from metal wiring layers and are divided into two layers so that the pitch of the bit lines can be widened. Thereby, a non-volatile semiconductor memory device having an increased access speed while maintaining production yield can be implemented.