| 发明名称 |
Slurry for chemical/mechanical polishing of wafer, contains metal oxide abrasive particles, removal rate accelerator, anionic polymeric passivation agent, anionic passivation agent having one to twelve carbon, and water |
| 摘要 |
A slurry for chemical/mechanical polishing (CMP) a wafer, comprises metal oxide abrasive particles; a removal rate accelerator; an anionic polymeric passivation agent having a molecular weight of 1000-100000; a 1-12C anionic passivation agent; and water. |
| 申请公布号 |
DE10252049(A1) |
申请公布日期 |
2004.02.26 |
| 申请号 |
DE2002152049 |
申请日期 |
2002.11.08 |
| 申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE, JONG-WON;HONG, CHANG-KI;LEE, JAE-DONG |
| 分类号 |
B24B37/00;C09G1/02;C09K3/14;H01L21/302;H01L21/304;H01L21/3105;H01L21/3205;H01L21/321;H01L21/768;(IPC1-7):C09G1/16 |
主分类号 |
B24B37/00 |
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