发明名称 FILM DEPOSITION APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a film deposition apparatus for preventing warping of a tray to hold a substrate to be treated or heat radiation from the substrate to the tray and ensuring the temperature uniformity on the substrate in a process for sputtering a ferroelectric film or the like while maintaining the heat uniformity of 600°C±5°C. SOLUTION: For a mechanism for holding a substrate subjected to high-temperature film deposition, the substrate 1 is held on a tray 3 by a pin 2, slit is performed on the tray 3, and a shock-absorbing material 39 is thermally-sprayed on the rear face of the tray 3 to improve the temperature uniformity of the surface of the substrate 1. COPYRIGHT: (C)2004,JPO
申请公布号 JP2004059990(A) 申请公布日期 2004.02.26
申请号 JP20020219328 申请日期 2002.07.29
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 YOSHINAGA MITSUHIRO
分类号 C23C14/50;C23C16/458;C23C16/46;H01L21/68;H01L21/683;(IPC1-7):C23C14/50 主分类号 C23C14/50
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