发明名称 |
Polysilicon opening polish |
摘要 |
Fabricating a semiconductor structure includes providing a semiconductor substrate, forming a silicide layer over the substrate, and removing a portion of the silicide layer by chemical mechanical polishing. The fabrication of the structure can also include forming a dielectric layer after forming the silicide layer, and removing a portion of the dielectric layer by chemical mechanical polishing before removing the portion of the silicide layer.
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申请公布号 |
US2004038535(A1) |
申请公布日期 |
2004.02.26 |
申请号 |
US20010008683 |
申请日期 |
2001.12.04 |
申请人 |
BARNS CHRIS E.;DOCZY MARK |
发明人 |
BARNS CHRIS E.;DOCZY MARK |
分类号 |
H01L21/321;H01L21/336;H01L29/49;(IPC1-7):H01L21/302;H01L21/461 |
主分类号 |
H01L21/321 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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