发明名称 Polysilicon opening polish
摘要 Fabricating a semiconductor structure includes providing a semiconductor substrate, forming a silicide layer over the substrate, and removing a portion of the silicide layer by chemical mechanical polishing. The fabrication of the structure can also include forming a dielectric layer after forming the silicide layer, and removing a portion of the dielectric layer by chemical mechanical polishing before removing the portion of the silicide layer.
申请公布号 US2004038535(A1) 申请公布日期 2004.02.26
申请号 US20010008683 申请日期 2001.12.04
申请人 BARNS CHRIS E.;DOCZY MARK 发明人 BARNS CHRIS E.;DOCZY MARK
分类号 H01L21/321;H01L21/336;H01L29/49;(IPC1-7):H01L21/302;H01L21/461 主分类号 H01L21/321
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