| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a voltage step-down circuit capable of adjusting a potential level of a word line independently of that of the others. <P>SOLUTION: The semiconductor device, in which a first semiconductor chip mounted with a semiconductor memory and a second semiconductor chip having the voltage step-down circuit are sealed in a multi-chip package, has a general source pad and a word line-dedicated source pad. The voltage step-down circuit supplies a first potential to the general source pad and a second potential which is higher than the first potential to the word line-dedicated source pad. <P>COPYRIGHT: (C)2004,JPO |
