| 发明名称 |
Method for improving nitrogen profile in plasma nitrided gate dielectric layers |
| 摘要 |
A method is provided wherein a gate dielectric film that is plasma nitrided in a chamber of one system is subsequently heated or "annealed" in another chamber of the same system. Processing delay can be controlled so that all wafers processed in the system experience similar nitrogen content.
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| 申请公布号 |
US2004038487(A1) |
申请公布日期 |
2004.02.26 |
| 申请号 |
US20030461143 |
申请日期 |
2003.06.12 |
| 申请人 |
APPLIED MATERIALS, INC. |
发明人 |
OLSEN CHRISTOPHER S. |
| 分类号 |
H01L21/265;H01L21/00;H01L21/28;H01L21/314;H01L21/318;H01L21/324;H01L29/51;H01L29/78;(IPC1-7):H01L21/320;H01L21/336;H01L21/476 |
主分类号 |
H01L21/265 |
| 代理机构 |
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