| 摘要 |
<P>PROBLEM TO BE SOLVED: To prevent the refreshing characteristics deteriorated by the influence of adjacent word lines of adjacent cells and to enable to reduce defects a after packaging and reflowing. <P>SOLUTION: An active region 1 has a diffused layer in a region sandwiched between word lines 4, 2, 3 and 5. The diffused layer 6 sandwiched between the word lines 2 and 3 is connected to a bit line via a contact, and a diffused layer 7 sandwiched between the word lines 2 and 4 and a diffused layer 8 sandwiched between the word lines 3 and 5 are connected to respective capacities through a contact. A cell structure has two cell transistors in which the word line 2 is used as a gate electrode, and the diffused layers 6, 7 are used as source/drain. In the structure, the word line 3 is used as a gate electrode, and the diffused layers 6, 8 are used as source/drain. N-type diffused layers 7, 8 formed of the word lines 2, 3 adjacent to the word lines 4, 5 have a high n-type carrier concentration at the word lines 4, 5 sides from the word lines 2, 3 sides, or a p-type substrate concentration is set to a low concentration at the word lines 4, 5 sides. <P>COPYRIGHT: (C)2004,JPO |
