Semiconductor storage device used as a DRAM device comprises a cell transistor structure with word lines having an n-diffusion layer with an n-carrier concentration which is higher on the region close to the word line of one cell

摘要

Semiconductor storage device comprises a cell transistor structure with word lines (2,3,4,5) having an n-diffusion layer (6, 7, 8) with an n-carrier concentration which is higher on the region close to the word line of one cell than on the region close to the word line of another cell. Independent claims are also included for: (a) alternative semiconductor storage devices; and (b) processes for the production of the semiconductor storage device.