| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a plasma CVD apparatus for realizing a dense and uniform fine crystalline structure of a thin film, and easily depositing the thin film even on a substrate of large area. <P>SOLUTION: This plasma CVD apparatus generates plasma between a cathode 2 and an anode 3 by emitting ionized inert gas from the cathode 2 to the anode 3 to perform the discharge. The cathode 2 is formed of an emission material to emit thermoelectrons and includes at least one passing hole 21 to allow the inert gas C to pass through, and an IH coil 6 to perform induction heating of the emission material, and has a skirt 8 having an aperture 10 opened in the emitting direction X of the inert gas C. The anode 3 is disposed inside the skirt 8 or in a vicinity of the cathode 2. <P>COPYRIGHT: (C)2004,JPO |
