| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an additive for a photoresist having excellent transparency for ArF excimer light and capable of improving the resolution, dry etching property and sensitivity, and to provide a photoresist composition. <P>SOLUTION: The additive for a photoresist comprises a compound expressed by general formula (I) and/or a compound expressed by general formula (II). The additive for a photoresist is a chemically amplifying photoresist composition essentially comprising a polymer which changes into alkali-soluble by the action of an acid, a compound which generates an acid by the action of light, and a solvent which dissolves them. The additive for a photoresist and the photoresist composition are useful particularly for ArF excimer light. <P>COPYRIGHT: (C)2004,JPO |
