发明名称 |
Low dark current pixel with a guard drive active photodiode |
摘要 |
A method and apparatus for reducing thermally generated dark current in a CMOS imaging device is disclosed. A photodiode within the imaging device is kept zero-biased, so that the voltage is equal at both ends of the photodiode. This zero-biasing is accomplished using several different techniques, including, alternatively: a transistor operating at its sub-threshold level; a leaky diode; a short-channel MOSFET; or ramping charge injection.
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申请公布号 |
US2004036009(A1) |
申请公布日期 |
2004.02.26 |
申请号 |
US20020226197 |
申请日期 |
2002.08.23 |
申请人 |
TAKAYANAGI ISAO;NAKAMURA JUNICHI |
发明人 |
TAKAYANAGI ISAO;NAKAMURA JUNICHI |
分类号 |
H04N5/335;H01L27/146;H04N3/15;H04N5/217;(IPC1-7):H01L27/00 |
主分类号 |
H04N5/335 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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