| 摘要 |
PROBLEM TO BE SOLVED: To provide a pull-up transistor array of a high-voltage output circuit. SOLUTION: In the transistor array, an epitaxial layer is formed on a semiconductor substrate, and n double diffusion DMOS transistors (Trs) are horizontally arranged on the epitaxial layer. One of the source/drain of each of the above-mentioned double diffusion type transistors is individually formed in each transistor, and the n double diffusion type transistors share the other source/drain. Thus, this pull-up transistor array can output a signal of high voltage and high current, an element isolation region is not required between the double diffusion transistors, and therefore an element can be integrated highly. COPYRIGHT: (C)2004,JPO
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