| 摘要 |
A high frequency power amplifier circuit comprises an input circuit (20) receiving an input signal; a first cascode stage connected to the input circuit and a DC voltage source and comprising at least one FET (1, 1', 2, 2') having a source, a drain, and a gate; an second cascode stage comprising: at least one bipolar transistor (4, 4') having an emitter, a collector and a base and being supplied by the first cascode stage (22), and a delimiting means, preferably a diode (82, 84), connected to the bipolar transistor (4, 4') and adapted to reduce the voltage level to the drain of the FET (1, 1', 2, 2') or the emitter of the bipolar transistor (4, 4') respectively; and an output circuit (128) connected to the second cascode stag (26) and outputting an output signal. |
