发明名称 Barrier-metal-free copper damascene technology using atomic hydrogen enhanced reflow
摘要 A method for forming conductive contacts and interconnects in a semiconductor structure, and the resulting conductive components are provided. In particular, the method is used to fabricate single or dual damascene copper contacts and interconnects in integrated circuits such as memory devices and microprocessor.
申请公布号 US6696360(B2) 申请公布日期 2004.02.24
申请号 US20010809670 申请日期 2001.03.15
申请人 MICRON TECHNOLOGY, INC. 发明人 AHN KIE Y.;FORBES LEONARD
分类号 H01L21/285;H01L21/314;H01L21/316;H01L21/768;(IPC1-7):H01L21/476;H01L21/44 主分类号 H01L21/285
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