| 摘要 |
Multi-pattern data retention testing and iterative change of measurement testing are used for the production of Known Good Dies. Multi-pattern data testing of a memory such as an SRAM comprises writing at Vdd, reduction of Vdd, restoration of Vdd, reading of the memory, and comparison of write patterns to read patterns to determine accuracy of data retention. Iterative or change of measurement testing involves repeated testing of a die to determine changes in Iddq, changes in multi-pattern data retention, or other changes in chip operating parameters. Defect activating test may be used in combination with change of measurement testing or with multi-pattern data retention testing.
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