Semiconductor breakdown diode temperature compensation,申请号US19630292342-传众专利搜索

首页产品黄页商标征信

会员服务注册登录

法人/股东/高管

发明名称	Semiconductor breakdown diode temperature compensation
摘要
申请公布号	US3281656(A)	申请公布日期	1966.10.25
申请号	US19630292342	申请日期	1963.07.02
申请人	NUCLEAR CORPORATION OF AMERICA	发明人	NOBLE RUPERT F.
分类号	G05F3/18;H03F1/30	主分类号	G05F3/18
代理机构		代理人
主权项
地址

您可能感兴趣的专利

CONTROLLER FOR MOTOR

PLASMA TREATMENT EQUIPMENT

INDUCTION PLASMA CHAMBER EQUIPPED WITH MULTIPLE DISCHARGE TUBE BRIDGE

ACTIVE MATRIX TYPE DISPLAY DEVICE

METHOD FOR DYEING PROTEIN

DIE FOR DIE CASTING

ELECTRODE REACTION APPARATUS IN HIGH GRAVITATIONAL FIELD

ANCHOR REMOTE GUIDANCE SYSTEM FOR ENDOSCOPE AND TREATMENT METHOD WITH ENDOSCOPE USING THE SAME

NUCLEIC ACID ARRAY

EXHAUST EMISSION CONTROL SYSTEM FOR INTERNAL COMBUSTION ENGINE

EXHAUST EMISSION CONTROL DEVICE

EMISSION CONTROL DEVICE, AND CONTROL DEVICE FOR INTERNAL COMBUSTION ENGINE

EXHAUST GAS CLEANING CATALYST AND EXHAUST GAS CLEANING METHOD

CLOCK RESTORATION METHOD USING USER CLOCK CODE OF TIME-DIVISION MULTIPLEXED VIDEO SIGNAL AND TRANSMITTING/RECEIVING APPARATUS USED FOR METHOD

HEAT-SENSITIVE LITHOGRAPHIC PRINTING PLATE PRECURSOR

DISTRIBUTION SYSTEM MONITORING AND CONTROLLING DEVICE

ELECTRONIC PART PACKAGING APPARATUS