SEMICONDUCTOR DEVICE HAVING EEPROM AND MASK-ROM AND METHOD OF FABRICATING THE SAME

摘要

PURPOSE: A semiconductor device having EEPROM(electrically erasable programmable read-only memory) and mask-ROM and a method of fabricating the same are provided to be capable of preventing a tunnel oxide layer from being misaligned in a floating impurity region. CONSTITUTION: A semiconductor device is provided with a semiconductor substrate, an isolation layer(110) formed at the predetermined portion of the semiconductor substrate for defining a cell active region and a mask ROM active region, and a channel impurity region(155) formed at the predetermined portion of the mask ROM active region. The semiconductor device further includes a plurality of mask ROM gates(199) formed across the upper portion of the mask ROM active region and a mask ROM gate isolating layer between the mask ROM gate and the mask ROM active region.