| 摘要 |
PURPOSE: A dry etching apparatus using high density plasma and a dry etching method using the same are provided to improve etching characteristics such as etched shapes and the etch selectivity by shortening a time sharing gas supply period. CONSTITUTION: A dry etching apparatus includes an RF power supply unit for supplying RF power, an antenna(13) connected to a frequency coupler, a plasma reactor(100) having a gas injection hole, a dielectric window, and a substrate chuck, and a substrate chuck power supply unit for supplying the RF power to a substrate chuck(17). The dry etching apparatus further includes one or more gas flow controllers(21-1,21-2), one or more main gas valves(22-1,22-2), and one or more bypass gas valves(23-1,23-2). The gas flow controllers are installed at a process gas supply line(20). The main gas valves are connected to an outlet of the gas flow controller. The bypass gas valves are connected to a gas exhaust line(31).
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