发明名称 FIELD EMISSION DEVICE AND FABRICATION METHOD THEREOF
摘要 PURPOSE: A field emission device and a fabrication method thereof are provided to insulate a spacer as well as a cathode using an insulation film having low residual stress. CONSTITUTION: A field emission device comprises a base plate(1) having a cathode(2), a top plate having an anode, a spacer maintaining spacing between the base plate and the top plate, and an insulation film(3,4,7) made of amorphous silicon and insulating the cathode and the spacer between the base plate and the spacer. The insulation film insulating the cathode and the spacer has a stacked structure of the amorphous silicon and silicon oxidation film, or the amorphous silicon and silicon nitride film. A field emission device fabrication method comprises a step of forming the base plate and the top plate, a step of arranging the spacer between the base plate and the top plate, and a step of sealing the base plate and the top plate. The insulation film between the base plate and the spacer is evaporated with amorphous silicon by sputtering method.
申请公布号 KR20040016288(A) 申请公布日期 2004.02.21
申请号 KR20020048560 申请日期 2002.08.16
申请人 LG ELECTRONICS INC. 发明人 KIM, YONG CHEOL
分类号 H01J1/30;(IPC1-7):H01J1/30 主分类号 H01J1/30
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