发明名称 |
Aluminum/copper clad interconnect layer for VLSI applications |
摘要 |
A method of forming at least one aluminum/copper clad interconnect comprising the following steps. A substrate is provided having an overlying patterned dielectric layer. The patterned dielectric layer having at least one lower opening. The at least one lower opening is lined with a first barrier layer. At least one planarized copper portion is formed within the at least one first barrier layer lined lower opening. A patterned layer is formed over the at least one planarized copper portion and the patterned dielectric layer. The patterned layer has at least one upper opening exposing at least a portion of the at least one planarized copper portion. The at least one upper opening is lined with a second barrier layer. At least one aluminum portion is formed within the at least one second barrier layer lined opening to form the at least one aluminum/copper clad interconnect.
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申请公布号 |
US2004033685(A1) |
申请公布日期 |
2004.02.19 |
申请号 |
US20020222361 |
申请日期 |
2002.08.16 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY |
发明人 |
JENG SHIN-PUU;HOU SHANG-YUN |
分类号 |
H01L21/768;H01L23/532;(IPC1-7):H01L21/44;H01L21/476 |
主分类号 |
H01L21/768 |
代理机构 |
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