发明名称 |
Semiconductor device and method for manufacturing the same |
摘要 |
A semiconductor device and a method for forming the same. A dielectric layer is formed on a semiconductor substrate or on a lower electrode of a capacitor. Vacuum annealing is performed on the dielectric layer. Thus, impurities remaining in the dielectric layer can be effectively removed, and the dielectric layer can be densified. As a result, the electrical characteristics of the semiconductor device are improved. For example, the leakage current characteristics of the dielectric layer are improved and capacitance is increased.
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申请公布号 |
US2004033661(A1) |
申请公布日期 |
2004.02.19 |
申请号 |
US20030452979 |
申请日期 |
2003.06.02 |
申请人 |
YEO JAE-HYUN;KIM SUNG-TAE;KIM YOUNG-SUN;PARK IN-SUNG;WON SEOK-JUN;LEE YUN-JUNG;IM KI-VIN;PARK KI-YEON |
发明人 |
YEO JAE-HYUN;KIM SUNG-TAE;KIM YOUNG-SUN;PARK IN-SUNG;WON SEOK-JUN;LEE YUN-JUNG;IM KI-VIN;PARK KI-YEON |
分类号 |
H01L27/04;H01L21/02;H01L21/31;H01L21/314;H01L21/316;H01L21/469;H01L21/8242;H01L27/108;H01L29/76;H01L29/94;H01L31/119;(IPC1-7):H01L21/824 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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地址 |
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