| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To stably obtain proper characteristics of a thin-film transistor. <P>SOLUTION: The thin-film transistor (135) is provided with a first ohmic contact layer (139A), a second ohmic contact layer (139B) installed separately from the first ohmic contact layer (139A) by an appropriate distance, a source electrode (138) with at least one part of it installed on the first ohmic contact layer (139A), a drain electrode (137) with at least one part of it installed on the second ohmic contact layer (139B), and a semiconductor layer (140) installed on the first ohmic contact layer (139A), the second ohmic contact layer (139B), the source electrode (138) and the drain electrode (137). <P>COPYRIGHT: (C)2004,JPO</p> |
