ROW DECODER OF FLASH MEMORY AND ERASING METHOD OF FLASH MEMORY USING THE ROW DECODER

摘要

PROBLEM TO BE SOLVED: To provide a row decoder of a flash memory that can prevent a breakdown phenomenon in an ONO insulating film occurring in erasing operation in an E/W cycle test or the like, and to provide an erasing method of the flash memory using the row decoder.

SOLUTION: The row decoder includes a PMOS transistor that receives a first input signal in a gate electrode and is connected between a first power supply terminal an a first node; a first NMOS transistor that receives the first input signal at the gate electrode and is connected between the first and second nodes; a second NMOS transistor that receives a second input signal at the gate electrode and is connected between the second node and an earth terminal; and a switch means that receives a third input signal in the gate electrode and is connected between the second node and a second power supply terminal. In this case, the first node is connected to the word line of a memory matrix.

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