| 摘要 |
PROBLEM TO BE SOLVED: To obtain a semiconductor laser which emits a laser light, that does not increase in relative intensity noise after the light, is transmitted for a prescribed distance. SOLUTION: An n-type InP buffer layer 2, a GRIN-SCH-MQW active layer 3, and a p-type InP spacer layer 4 are laminated on an n-type InP substrate 1. Then a p-type InP blocking layer 8 and an n-type InP blocking layer 9 are laminated on the substrate 1 adjacently to the upper region of the buffer layer 2, active layer 3, and spacer layer 4. In addition, a p-type InP clad layer 6, a p-type GaInAsP contact layer 7, and a p-side electrode 10 are laminated on the spacer layer 4 and blocking layer 9 and an n-side electrode 11 is arranged on the rear surface of the substrate 1. Moreover, a diffraction grating 13 is arranged in the spacer layer 4. The grating 13 selects the laser light which only has 60 or fewer longitudinal oscillation modes, having differential values of≤10 dB with respect to the maximum intensity. COPYRIGHT: (C)2004,JPO
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