发明名称 |
HIGH CAPACITANCE CAPACITOR HAVING MULTI VERTICAL STRUCTURE |
摘要 |
PURPOSE: A high capacitance capacitor having multi vertical structure is provided to be capable of increasing the capacitance per a unit surface area without an additional process. CONSTITUTION: A high capacitance capacitor is provided with an upper electrode(70), a lower electrode(72), and a dielectric layer(74) located between the upper and lower electrode. A plurality of electrodes are slantingly formed at the inner portion of the dielectric layer. The first electrodes(70a) are connected with the upper electrode alone. The second electrodes(72b) are connected with the lower electrode alone. At this time, the first and second electrodes are alternately arrayed in the dielectric layer.
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申请公布号 |
KR20040015426(A) |
申请公布日期 |
2004.02.19 |
申请号 |
KR20020047516 |
申请日期 |
2002.08.12 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHO, GYE OK;KIM, HUN TAE |
分类号 |
H01L27/08;(IPC1-7):H01L27/02 |
主分类号 |
H01L27/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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