| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting device which enables high power and reliability. <P>SOLUTION: A GaN layer 7, an n-GaN contact layer 8, and an n-Ga<SB>0.88</SB>Al<SB>0.12</SB>N lower clad layer 9 are selectively grown on a sapphire substrate 1, a porous anodized alumina thin film 10 is pasted on the lower clad layer 9, an n-GaN optical waveguide layer 11, an In<SB>x2</SB>Ga<SB>1-x2</SB>N/In<SB>x1</SB>Ga<SB>1-x1</SB>N multi-quantum well active layer (0.5>x1>x≥0) 12 and a p-GaN optical waveguide layer 13 are grown inside the micropores of the anodized alumina film 10; furthermore, a p-Ga<SB>0.88</SB>Al<SB>0.12</SB>N upper clad layer 14, a p-GaN contact layer 15, and a p-side electrode 17 are formed on the p-GaN optical waveguide layer 13, and an n-side electrode 16 is formed on the n-GaN contact layer 8 that is exposed by etching. <P>COPYRIGHT: (C)2004,JPO |
