| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for depositing a film in a large area while the thickness/quality of the film are highly uniform at a high speed with high quality and to provide a semiconductor device formed using the same. <P>SOLUTION: In a Cat-PECVDC (catalytic plasma enhanced chemical vapor deposition) method, a source gas containing at least one of Si and C in a molecular formula and a non-Si non-C gas containing a gas not containing the Si and the C in a molecular formula, heated by a heat catalyst arranged on a gas inlet path are injected from a plurality of gas jet ports, provided at an antenna electrode passing through a hollow part of the electrode installed in a film deposition space and having a hollow structure. The gases, injected into the space and mixed, are decomposed/activated by a plasma generated by the electrode connected to a high-frequency power source, and the film is deposited on a base disposed opposite to the electrode in the space. The semiconductor device is formed by using this method. <P>COPYRIGHT: (C)2004,JPO</p> |
