Metal-insulator-metal integrated circuit capacitor for integrated circuit devices, comprises pair of capacitors on integrated circuit substrate that are electrically connected in antiparallel

摘要

A metal-insulator-metal integrated circuit capacitor comprises first and second capacitors (310, 320) each having a lower metal layer (311, 321), a dielectric layer (312, 322), and upper metal layer (313, 323) stacked in sequence on an integrated circuit substrate, where the second lower metal layer is electrically connected to the first upper metal layer and the second upper metal layer is electrically connected to the first lower metal layer. An independent claim is also included for an integrated circuit device comprising a first interlayer dielectric (ILD) layer on an integrated circuit substrate; first and second lower metal layers on a first level on the first ILD layer surface, and separated from each other by a second ILD layer; a first dielectric layer on the first lower metal layer; a second dielectric layer on the second lower metal layer; a third dielectric layer by which the first and second dielectric layers are separated from each other; and first and second upper metal layers, a respective one of which is on a respective one of the first dielectric layer and the second dielectric layer, while being separated from each other on a second level on surfaces of the first dielectric layer and the second dielectric layer.