| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor photodetector which can substantially improve photodetecting sensitivity, light-inputting resistance, high-speed responsiveness and dark current characteristics by efficiently converting a light into current by a light-absorbing layer, by regulating the propagation path of the light incident to the absorbing layer. SOLUTION: In the semiconductor photodetector, the light incident to the light-absorbing layer 4 is made incident to the lower surface of a second semiconductor layer 3 at a critical angle with respect to the lower surface of the layer 3, then is totally reflected by the lower surface of the second semiconductor layer 3 by regulating refractive indexes of a first semiconductor layer 15, the absorbing layer 4 and the semiconductor layer 3 and an incident angle of the incident light, and propagated through at least one of the layer 4 and the layer 15, in a direction which is parallel direction with the lower surface of the layer 3. COPYRIGHT: (C)2004,JPO
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