发明名称 EQUALIZATION/PRECHARGE CIRCUIT IMPROVING SIGNAL TRANSMISSION CHARACTERISTICS THROUGH INPUT/OUTPUT LINE PAIR AND SEMICONDUCTOR MEMORY DEVICE COMPRISING THE SAME
摘要 PURPOSE: An equalization/precharge circuit and a semiconductor memory device comprising the same are provided to improve signal transmission characteristics through input/output line pair. CONSTITUTION: The equalization/precharge circuit are connected to a bit line and a complementary bit line connected to a memory cell array through a column selection transistor, and they equalize and precharge a data line and a complementary data line arranged in parallel. An equalization transistor(EQ1) equalizes the data line and the complementary data line. The first precharge transistor(PCH1) precharges the data line to a fixed voltage level. The second precharge transistor(PCH2) precharges the complementary data line to the voltage level. A gate of the equalization transistor and a gate of the first precharge transistor and a gate of the second precharge transistor are connected in a T shape each other.
申请公布号 KR20040014742(A) 申请公布日期 2004.02.18
申请号 KR20020047380 申请日期 2002.08.10
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KANG, CHANG MAN
分类号 G11C7/10;(IPC1-7):G11C7/12 主分类号 G11C7/10
代理机构 代理人
主权项
地址