发明名称 |
EQUALIZATION/PRECHARGE CIRCUIT IMPROVING SIGNAL TRANSMISSION CHARACTERISTICS THROUGH INPUT/OUTPUT LINE PAIR AND SEMICONDUCTOR MEMORY DEVICE COMPRISING THE SAME |
摘要 |
PURPOSE: An equalization/precharge circuit and a semiconductor memory device comprising the same are provided to improve signal transmission characteristics through input/output line pair. CONSTITUTION: The equalization/precharge circuit are connected to a bit line and a complementary bit line connected to a memory cell array through a column selection transistor, and they equalize and precharge a data line and a complementary data line arranged in parallel. An equalization transistor(EQ1) equalizes the data line and the complementary data line. The first precharge transistor(PCH1) precharges the data line to a fixed voltage level. The second precharge transistor(PCH2) precharges the complementary data line to the voltage level. A gate of the equalization transistor and a gate of the first precharge transistor and a gate of the second precharge transistor are connected in a T shape each other.
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申请公布号 |
KR20040014742(A) |
申请公布日期 |
2004.02.18 |
申请号 |
KR20020047380 |
申请日期 |
2002.08.10 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KANG, CHANG MAN |
分类号 |
G11C7/10;(IPC1-7):G11C7/12 |
主分类号 |
G11C7/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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