发明名称 |
Power SiC devices having raised guard rings |
摘要 |
Silicon carbide semiconductor power devices having epitaxially grown guard rings edge termination structure are provided. Forming the claimed guard rings from an epitaxially grown SiC layer avoids the traditional problems associated with implantation of guard rings, and permits the use of self aligning manufacturing techniques for making the silicon carbide semiconductor power devices.
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申请公布号 |
US6693308(B2) |
申请公布日期 |
2004.02.17 |
申请号 |
US20020079892 |
申请日期 |
2002.02.22 |
申请人 |
SEMISOUTH LABORATORIES, LLC |
发明人 |
SANKIN IGOR;DUFRENE JANNA B. |
分类号 |
H01L29/47;H01L21/331;H01L21/337;H01L29/06;H01L29/24;H01L29/732;H01L29/772;H01L29/78;H01L29/80;H01L29/808;H01L29/861;H01L29/868;H01L29/872;(IPC1-7):H01L33/00;H01L31/031 |
主分类号 |
H01L29/47 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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