| 发明名称 |
Ion implantation method and ion implantation equipment |
| 摘要 |
In an ion implantation method using an ion implantation equipment having an extraction electrode and a post accelerator, ion is uniformly implanted into a shallow region from the surface of a sample by setting an applied volt. of the post accelerator higher than an applied volt. of the extraction electrode.
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| 申请公布号 |
US6693023(B2) |
申请公布日期 |
2004.02.17 |
| 申请号 |
US20020079490 |
申请日期 |
2002.02.22 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
MURAKOSHI ATSUSHI;SUGURO KYOICHI |
| 分类号 |
H01J37/317;H01L21/265;(IPC1-7):H01L21/04 |
主分类号 |
H01J37/317 |
| 代理机构 |
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