| 摘要 |
PURPOSE: An ion implantation unit is provided to control an operation of a drift valve by installing a valve between a source and beam line and a chamber. CONSTITUTION: An ion implantation unit includes a source and beam line, a drift tube, a chamber gate valve, and a chamber. The source and beam line is used for generating, accelerating, and transmitting the ion beam. The drift tube is used as a path for transmitting the ion beam. The chamber gate valve is connected to the drift tube in order to perform an interlock function. The chamber is used for irradiating the ion beam to a semiconductor wafer. The ion implantation unit further includes a valve(254) for closing the drift valve and a driving unit(252) for operating the valve(254). The driving unit is formed with an electromagnet.
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