| 摘要 |
PROBLEM TO BE SOLVED: To provide an improved method for depositing an Si-C-N material functioning as an etching stopping layer on a substrate by using a PECVD. SOLUTION: In the process related to a plasma-enhanced chemical vapor-phase deposition (PECVD) for depositing a nitrogen-doped silicon carbide (Si-C-N) material, a nitrogen gas (N<SB>2</SB>) aids chemical precursors for silicon and carbon. The nitrogen gas aids not only the other chemical precursors and a plasma seeds during the PECVD processing, but also participates in a film formation. The nitrogen carrier gas is activated by a plasma energy similarly to the other chemical precursors. The excitation seeds of the nitrogen gas so reacts on the excitation seeds for silicon and carbon as to deposit the Si-C-N material on a substrate. The use of the nitrogen gas improves the stability of the plasma and eliminates any arcing during the PECVD processing. COPYRIGHT: (C)2004,JPO
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