| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To improve the stability of the operational performance of a display device and expand a design margin in designing circuits therefor. <P>SOLUTION: The display device uses a SOG film as an insulating film (hereafter called a flattening film) for flattening the ruggedness caused by semiconductor devices, especially by transistors. The SOG film functioning as a flattening film is formed on a 1st inorganic insulating film covering the semiconductor devices, 1st openings are opened on the 1st flattening film and then a 2nd inorganic insulating film covering the 1st openings is formed, 2nd openings are formed on the 2nd inorganic insulating film by newly using photo resist or the like, and the upper electrodes are electrically connected to the lower electrodes across the flattening film. Further, a nitride insulating film is used as the 1st inorganic insulating film or the 2nd inorganic insulating film. <P>COPYRIGHT: (C)2004,JPO</p> |
