The invention relates to a substrate (600) which is provided with a support layer (501). An insulator layer (502) is applied to the support layer (501), comprising at least two areas having respectively different thicknesses. A semi-conductor layer (303) having an FD-area (304) and a PD-area (305) is applied to the surface of the insulating layer (502), comprising a planar surface. The planar surface is the surface which is opposite the insulating layer (502).
申请公布号
WO03088310(A3)
申请公布日期
2004.02.12
申请号
WO2003DE01281
申请日期
2003.04.16
申请人
INFINEON TECHNOLOGIES AG;HOFMANN, FRANZ;LUYKEN, RICHARD, JOHANNES;ROESNER, WOLFGANG;SPECHT, MICHAEL;STAEDELE, MARTIN
发明人
HOFMANN, FRANZ;LUYKEN, RICHARD, JOHANNES;ROESNER, WOLFGANG;SPECHT, MICHAEL;STAEDELE, MARTIN