| 摘要 |
PROBLEM TO BE SOLVED: To provide a cleaning method for easily performing a predetermined cleaning work with high efficiency in a metal film manufacturing apparatus. SOLUTION: When cleaning an apparatus for depositing a Cu thin film 16 on a substrate 3 by etching a copper sheet member 7 disposed inside a chamber 1 with Cl<SB>2</SB>gas plasma (raw gas plasma) 14, hydrogen plasma is firstly formed in the chamber 1 to reduce CuCl or the like deposited on an inner circumferential surface of the chamber 1. Then, Cl<SB>2</SB>gas plasma 14 is formed in the chamber 1 to remove Cu deposited on the inner circumferential surface of the chamber 1 by etching, and further, hydrogen plasma is formed in the chamber 1 to reduce and remove CuCl or the like deposited on a copper sheet member 7. COPYRIGHT: (C)2004,JPO
|
