| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a plasma-assisted sputtering process for depositing a thin film of a large crystallized film or a densified film on a substrate and a film-forming apparatus. <P>SOLUTION: The process is for forming the thin film on the substrate through sputtering in a vacuum chamber. The process comprises a step wherein a sheet-like plasma-confining region is formed by using rotating magnetron cathodes 2A and 2B and generating a mirror magnetic field wherein magnetic lines of force form arches near the surfaces of the cathodes 2A and 2B near the substrate 1, a step wherein another sheet-like plasma-confining region is formed by placing a magnet alignment 5 opposite to the cathodes 2A and 2B and generating another mirror magnetic field wherein magnetic lines of force form arches near the surface of the substrate 1 near cathodes 2A and 2B and a step wherein an electron cyclotron resonance plasma, employed as a reinforcement-assisting plasma, is generated in each region by applying microwaves to the surfaces of cathodes 2A and 2B near the substrate and to the surface of the substrate 1 near cathodes 2A and 2B toward the travel direction and/or the opposite direction. <P>COPYRIGHT: (C)2004,JPO |
