| 摘要 |
PROBLEM TO BE SOLVED: To efficiently remove residuals generated, when selectively removing a low dielectric constant film, such as SiOC or the like without damaging the insulation film or metal film. SOLUTION: Residuals 126 and 128, generated when an interconnection groove is formed in the SiOC film 116, are removed by the use of amine-based peeling solution which is weakly alkaline but contains no fluorine ions. After this removal processing, the wafer is rinsed with isopropyl alcohol and then dried without conducting rinsing with putified water. COPYRIGHT: (C)2004,JPO
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