Porous siliceous film having low permittivity, semiconductor devices and coating composition

摘要

There is provided a porous silica coating, suitable for an interlayer dielectric, which stably exhibits an extremely low specific dielectric constant and which also has resistance to various chemicals and a mechanical strength allowing the coating to withstand the latest highly integrating process including a CMP process. The porous coating of the present invention is obtained by baking a coating of a composition comprising a polyalkylsilazane and a polyacrylic or polymethacrylic ester, and is characterized by having a specific dielectric constant of less than 2.5.