| 摘要 |
PROBLEM TO BE SOLVED: To provide a bipolar transistor integrated circuit device of proper characteristics and a small element area. SOLUTION: The bipolar transistor, having a small collector resistance and a small element area, can be formed by utilizing a trench structure in the formation of the region called a sinker. It is effective in a BiCMOS, where a vertical field-effect transistor exists on the same substrate. These processes can be realized, without the addition of many steps to the conventional processes. COPYRIGHT: (C)2004,JPO
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