Organic field-effect transistor (ofet), a production method therefor, an integrated circut constructed from the same and their uses

摘要

The invention relates to an organic field-effect transistor with an improved performance. The output current is increased by the arrangement of several current channels on the OFET, all of which contribute to the output current. By positioning the source and drain electrode on a plane which is not parallel to the surface of the substrate, it is possible to reduce the distances between the source and the drain in relation to those previously attainable. This produces shorter current channels with faster switching speeds. Finally, the invention relates to integrated circuits, which are stacked on a substrate to save space.