| 发明名称 |
Semiconductor device having amorphous barrier layer for copper metallurgy |
| 摘要 |
A semiconductor device which includes, between a copper conductive layer and a low-k organic insulator, a barrier layer comprising an amorphous metallic glass, preferably amorphous tantalum-aluminum. A method of making the semiconductor device is also disclosed.
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| 申请公布号 |
US2004026119(A1) |
申请公布日期 |
2004.02.12 |
| 申请号 |
US20020215121 |
申请日期 |
2002.08.08 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHEN FEN |
| 分类号 |
H01L21/3205;H01L21/28;H01L21/312;H01L21/768;H01L23/532;(IPC1-7):H01L29/00 |
主分类号 |
H01L21/3205 |
| 代理机构 |
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