| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a thin film transistor, its manufacturing method, a display device using the same and an electronic apparatus, wherein an optical leak current occurring in a channel region can be reduced without impairing electric characteristics of a source electrode and a drain electrode. <P>SOLUTION: There are provided a semiconductor layer 1a having a source electrode 1d, a drain electrode 1e and a channel region 1a', and a gate layer 3a disposed facing the channel region 1a' through an insulating layer 2. In the insulating layer 2, the layer thickness of a gate insulating region 2' positioned between the gate layer 3a and the channel region 1a' is thinner than those of a source coating region 2d coating the source region 1d and a drain coating region 2e coating the drain region 1e, and the layer thickness of a region between the source region 1d and a drain region 1e of the semiconductor layer 1a is thinner than those of the source region 1d and the drain region 1e. <P>COPYRIGHT: (C)2004,JPO</p> |
