| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and its manufacturing method wherein damage to a silicon chip in a manufacturing process of a semiconductor device and the generation of voids in a mounting process can be prevented collectively. SOLUTION: A frame-like member 11 is formed in a peripheral edge region on the first main surface side of a silicon chip 30. The member 11 is formed of borosilicate glass as material higher than an emitter electrode film 16 and a gate electrode film 17. Recessed surfaces 20a, 20b are formed on a peripheral edge region on the second main surface side of the silicon chip 30. As a result, the frame-like member 11 serves as reinforcement, the damage to the silicon chip is prevented in a manufacturing process, and the recessed surfaces 20a, 20b contribute to escaping voids when a semiconductor device 10 is mounted. COPYRIGHT: (C)2004,JPO
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